Huge on-chip eDRAM L3. – 6x latency improvement. – No off-chip signaling rqmt. – 8x bandwidth improvement. – 3x less area than SRAM. – 5x less energy than. In a previous Power8 article, the performance and scaling benefits of IBM’s eDRAM capability were mentioned. One thing that should be stated. IBM Corp. took another step toward embedded DRAM and away from SRAM at ISSCC this week, pushing eDRAM as the technology to take over the SRAM.

Author: Gacage Zologrel
Country: Czech Republic
Language: English (Spanish)
Genre: Career
Published (Last): 6 July 2004
Pages: 347
PDF File Size: 11.86 Mb
ePub File Size: 20.76 Mb
ISBN: 137-2-35318-379-2
Downloads: 92405
Price: Free* [*Free Regsitration Required]
Uploader: Gum

Using a technique such as reactive-ion etching you form a deep trench. The IBM die is mm2 with 4.

IBM Unveils World’s Fastest On-Chip Dynamic Memory Technology

June 18, at Zen 2 will be manufactured on 7LP, I have a report on it here. Knowledge Centers Entities, people and technologies explored Learn More.

October 29, 2 Comments. Minimizing Chip Aging Effects Understanding aging factors within a design can help reduce the likelihood of product failures.

IBM Reveals Breakthrough eDRAM Memory Technology | Kurzweil

Power is not a substantial player in the Network Management world, so I would not really expect engineers to tune the CPU for this type of workload. Below is a cross-sectional SEM shot of the entire stack from the 40x power rails at the very top to the deep trench capacitors under the devices.

Trending Articles Fundamental Shifts In This will go down as a good year for the semiconductor industry, where new markets and innovation were both necessary ddram rewarded. Semiconductor devices face many hazards before and ib manufacturing that can cause them to fail prematurely. Figure 3 also shows a picture of the metal-insulator-metal MIM structure of the capacitor for the bit cell. A rough diagram is shown below. Experts at the Table, Part 1: Posted by David at 9: Network Management does require long term storage requirements of data, so this may be a very good back-end platform.


Connection to Network Management Network Management traditionally deals with extremely highly threaded workloads.

eDRAM – Wikipedia

Power Delivery Affecting Performance At 7nm Slowdown due to impact on timing, and dependencies between power, thermal and timing that may not be caught by signoff tools. After that, the low-resistivity titanium nitride TiN conformal layer is added.

DT eDRAM gives them a competitive advantage over SRAM as cache memory due to the significant density advantage since we have a single transistor and a single bit storage capacitor.

Incorporating both logic and DRAM on one silicon die and getting both to work well is a challenge. A poly strap i.

Hybrid Memory Ed Sperling.

Memories play a big role. The use of Static RAM has been traditionally beneficial to the chip manufacturers, since they could get fast and regular access to the memory cells, without having to wait for rdram slow refresh signal to propagate across the RAM.

Figure 2 shows a layout diagram for the companion Centaur memory buffer chip. This name will be displayed publicly. The poly with all the other layers go up to and into the BOx but stay fully within the BOx. Memories play a […]. November 18, No Comment. The use of Power 7 in these types of managed device facing highly threaded workloads is yet to be measured – it may be one of the most fabulous chips on the market, or it may be mediocre, for the network management space.

Because of the growing needs to keep the data closer and certainly as more pieces of the system continue to get incorporated onto the same die, there appears to be renewed interest in eDRAM. DTs are traditionally created by etching an opening in the hardmask or alike layer. Finally a liner is applied after which the trench is filled with the highly-doped probably arsenic-doped ibmm glass ASGn-type polycrystalline silicon.

The discourse on possible trade-offs have been silent, which confuses me from the media. David February 23, at 5: Spelling error report The following text will be sent to our editors: There, the fin switches from mono-Si to poly-Si which forms the connection bim the DT capacitor. This decision cost the cache ib few cycles of latency. With multi-process exram workloads, where data in the cache may not be simultaneously accessed from different cores or hardware strands, ddram may be a ibmm fit.


More Than a Core Interest in the open-source ISA marks a significant shift among chipmakers, but it will require continued industry support to be successful. In this 14nm process IBM switched to a FinFET from a planar transistor which introduces a new set of challenges since they now have to connect to a thin fin meaning the strap size is also reduced meaning resistivity becomes a more profound problem.

Labels were added by WikiChip. Process Corner Explosion Inm 7nm and below, modeling what will actually show up in silicon is a lot more complicated. One thing that should be stated upfront is that Haswell and Power8 are targeting different parts of the market. Interest in the open-source ISA marks a significant shift among chipmakers, but it will require continued industry support to be successful.

Strange physics and future devices. If so maybe in zen 2? I wonder what the ratio of performance hit to reduction in latency was in edeam to eDRAM? Since this eliminates the need for the sidewall nitride spacer they have always used previously in order to protect the BOx during the interim processes, this change effectively managed to extract additional density from the denser packing of the trenches.

GlobalFoundries 14HP boasts an ultra-dense 0. Every benefit comes with a drawbacks. There are also a lot of other factors that come into play when evaluating DRAM, such as performance and data retention, but this at least provides a quick high-level comparison.

Back to top